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 Bulletin I25153 rev. D 09/03
180/181RKI SERIES
PHASE CONTROL THYRISTORS Stud Version
Features
Hermetic glass-metal seal International standard case TO-209AB (TO-93)
180A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical
180/181RKI
180 80 285 3800 4000 72 66 400 to 1000 100 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AB (TO-93)
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180/181RKI Series
Bulletin I25153 rev. D 09/03
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
40 180/181RKI 80 100
V DRM /V RRM , max. repetitive peak and off-state voltage V
400 800 1000
repetitive peak voltage V
500 900 1100
VRSM , maximum non-
I DRM /I RRM max.
@ TJ = TJ max.
mA
30
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
180/181RKI
180 80 285 3800 4000 3500 3660
Units Conditions
A C DC @ 79C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2 s t = 8.3ms t = 10ms t = 8.3ms KA s
2
180 conduction, half sine wave
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I 2t
Maximum I2t for fusing
72 66 61 56
I t
2
Maximum I t for fusing
2
720 0.83
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 0.89 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.81 1.35 600 1000 V mA (I > x IT(AV)),TJ = TJ max. Ipk= 570A, TJ = TJ max, tp = 10ms sine pulse TJ = 25C, anode supply 12V resistive load
0.92
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time
180/181RKI
300 1.0
Units Conditions
A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s Vd = 0.67% VDRM, TJ = 25C
s 100
ITM = 50A, TJ = TJ max, di/dt = 10A/s, V R = 100V dv/dt = 20V/s
2
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180/181RKI Series
Bulletin I25153 rev. D 09/03
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
180/181RKI
500 30
Units Conditions
V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM IGM +VGM -VGM Maximum peak gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 130 65 35 VGT DC gate voltage required to trigger 2.0 1.2 0.9 IGD VGD DC gate current not to trigger DC gate voltage not to trigger 10 0.25 PG(AV) Maximum average gate power
180/181RKI
10 2.0 3.0 20
Units Conditions
W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms
V 5.0 MAX. 150 2.5 mA V V mA
TJ = TJ max., tp 5ms
TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C TJ = TJ max. Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
180/181RKI
-40 to 125 -40 to 150 0.15
Units Conditions
C
RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10%
DC operation K/W Mounting surface, smooth, flat and greased
0.04 31 (275) 24.5 (210) Nm (lbf-in)
Non lubricated threads
Lubricated threads g See Outline Table
wt
Approximate weight Case style
280
TO - 209AB (TO-93)
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180/181RKI Series
Bulletin I25153 rev. D 09/03
RthJC Conduction
Conduction angle
180 120 90 60 30
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction Units
0.050 0.063 0.080 0.118 0.225 0.032 0.059 0.082 0.124 0.228 K/W
Conditions
T J = T J max.
Ordering Information Table
Device Code
18
1 2 3 4 IT(AV) rated average output current (rounded/10) 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) Thyristor Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 1
1
2
RKI 100
3 4
Outline Table
GLASS METAL SEAL
19 (0.75) MAX. 8.5 (0.33) DIA. 4.3 (0.17) DIA.
9. 5( 0.3 6) 7) MI M N. IN .
4 (0.16) MAX.
FLEXIBLE LEAD C.S. 25mm 2 RED SILICON RUBBER 10 (0.39) RED CATHODE C.S. 0.4mm (0.0006 s.i.) WHITE GATE 2 (0.039 s.i.)
+I 210 (8.26)
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
82 (3.23) MIN.
RED SHRINK
220 (8.66) +10 (0.39) WHITE SHRINK
Fast-on Terminals
28.5 (1.12)
16 (0.63) MAX.
MAX.
28.5 (1.12) MAX. DIA.
21 (0.83)
MAX.
SW 32 3/4"-16UNF-2A 35 (1.38) MAX.
4
22
AMP. 280000-1 REF-250
(0 .8
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180/181RKI Series
Bulletin I25153 rev. D 09/03
Maximum Allowable Case Temperature (C) 130 120 110
Conduction Angle
Maximum Allowable Case Temperature (C)
180/181RKI Series 181RKI Series
R thJC (DC) = 0.15 K/W
130 120 110
180/181RKI Series 181RKI Series
R thJC (DC) = 0.15 K/W
Conduction Period
100 90 80 70 0 20 40 60 80 100 120 140 160 180 200 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
100 90 80 70 0 50 100 150 200 250 300 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
30
60
90
30 60 90 120 180
120
180 DC
Maximum Average On-state Power Loss (W)
240
SA R th
220 200 180 160
140
180 120 90 60 30 RMS Limit
2K 0.
3 0. W K/
0.6 K/ W
/W
K/ W .1 =0 elt -D aR
120 100 80
60
0 .8
1K
K/W
/W
Conduction Angle 1 .5 K/W
40 20
0
180/181RKI Series 181RKI Series
T J = 125C
2 K/W
0
20
40
60
80 100 120 140 160 180 0
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
350 300 250
200
DC 180 120 90 60 30
A hS Rt
0. 2
K/
=
W
1 0.
0.
3
W K/
K/ W
el -D ta R
150 RMS Limit
Conduction Period
0.6
K/ W
100
50 0 0 50 100
180/181RKI Series 181RKI Series
T J = 125C 150 200 250
K/ W 1 K/ W 1.5 K /W
2 K/ W
0.8
0 300
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
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180/181RKI Series
Bulletin I25153 rev. D 09/03
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
4000
3500
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
4000
3000
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 3500 Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied 3000
2500
2500
2000
180/181RKI Series 181RKI Series
2000
180/181RKI Series 181RKI Series
1500 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
1500 0.01
0.1 Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000 Instantaneous On-state Current (A)
TJ = 25C 1000 TJ = 125C
180/181RKI Series 181RKI Series
100 0.5 1 1.5 2 2.5 3
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value R thJC = 0.15 K/W (DC Operation) 0.1
0.01
180/181RKI Series 181RKI Series
0.001 0.001
0.01
0.1 Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z thJC Characteristic
6
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180/181RKI Series
Bulletin I25153 rev. D 09/03
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30ohms; tr<=0.5 s, tp=>6s b) Recommended load line for 10 <=30% rated di/dt: 15V, 40ohms (b) tr<=1 s, tp=>6s (a)
Tj=-40 C
(1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300s
Tj=25 C
1
Tj=140 C
(1)
(2) (3)
(4)
VGD IGD 0.1 0.001 0.01
Device: 180/181RKI Series Device: 181RKI Series
0.1 1
Frequency Limited by PG(AV) 10 100 1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03
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